PART |
Description |
Maker |
BS62LV8001 BS62LV8001EI BS62LV8001EIP55 BS62LV8001 |
Very Low Power/Voltage CMOS SRAM 1M X 8 bit Very Low Power/Voltage CMOS SRAM 1M X 8 bit 1M X 8 STANDARD SRAM, 70 ns, PBGA48 Very Low Power/Voltage CMOS SRAM 1M X 8 bit 1M X 8 STANDARD SRAM, 55 ns, PBGA48 Aluminum Electrolytic Capacitor; Capacitor Type:High Temperature; Voltage Rating:25VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to C; Capacitance:47uF RoHS Compliant: Yes From old datasheet system Asynchronous 8M(1Mx8) bits Static RAM
|
Brilliance Semiconducto... BRILLIANCE SEMICONDUCTOR, INC. BSI[Brilliance Semiconductor]
|
HY62U8200B HY62U8200B-E HY62U8200B-I A0A17 |
Low Power Slow SRAM - 2Mb 256Kx8bit CMOS SRAM 256K x8 bit 3.0V Low Power CMOS slow SRAM
|
Hynix Semiconductor
|
BS62LV1605FI BS62LV1605FC BS62LV1605EIP70 BS62LV16 |
From old datasheet system Asynchronous 16M(2Mx8) bits Static RAM Very Low Power/Voltage CMOS SRAM 2M X 8 bit 非常低功电压CMOS SRAM2米x 8 Very Low Power/Voltage CMOS SRAM 2M X 8 bit 非常低功电压CMOS SRAM米x 8 LM5080 Modular Current Sharing Controller; Package: MINI SOIC; No of Pins: 8 非常低功电压CMOS SRAM米x 8
|
BSI[Brilliance Semiconductor] BRILLIANCE SEMICONDUCTOR, INC.
|
UT6264CPC- UT6264CSC- UT6264CSC-70LL UT6264CSC-70L |
8K X 8 BIT LOW POWER CMOS SRAM 8K的8位低功耗CMOS SRAM
|
Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers N.A. ETC[ETC] UTRON Technology
|
K6T1008C2C K6T1008C2C-RB55 K6T1008C2C-RB70 K6T1008 |
128K X 8 STANDARD SRAM, 70 ns, PDSO32 128K x8 bit Low Power CMOS Static RAM 128K的x8位低功CMOS静态RAM 128K x8 bit Low Power CMOS Static RAM 128K的x8位低功耗CMOS静态RAM 55/70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM 55ns; 128 x 8-bit low power CMOS static RAM 70ns; 128 x 8-bit low power CMOS static RAM
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic
|
N01L63W3AB25I N01L63W3AB25IT N01L63W3A |
1 Mb Ultra-Low Power Asynchronous CMOS SRAM 1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K ? 16 bit
|
ON Semiconductor
|
BS62LV8005 BS62LV8005BC BS62LV8005BI BS62LV8005EC |
DDR-II, 25-Bit 1:1 or 14-Bit 1:2 Configurable Registered Buffer Very Low Power/Voltage CMOS SRAM 1M X 8 bit
|
BRILLIANCE SEMICONDUCTOR, INC. BSI[Brilliance Semiconductor]
|
HY62V8100B HY62V8100BLLT1 HY62V8100BLLG-E HY62V810 |
Low Power Slow SRAM - 1Mb 128K x8 bit 3.3V Low Power CMOS slow SRAM
|
HYNIX[Hynix Semiconductor]
|
GLT6100L08LL-100ST GLT6100L08LL-100TS GLT6100L08LL |
100ns; Ultra low power 128k x 8 CMOS SRAM 55ns; Ultra low power 128k x 8 CMOS SRAM 70ns; Ultra low power 128k x 8 CMOS SRAM 85ns; Ultra low power 128k x 8 CMOS SRAM
|
G-LINK Technology
|
BH616UV1611TI70 BH616UV1611DIP55 BH616UV1611TIP70 |
Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit / 2M x 8-bit
|
Brilliance Semiconductor
|
GM76U256C GM76U256CE GM76U256CL GM76U256CLE GM76U2 |
x8 SRAM 32K X 8 STANDARD SRAM, 120 ns, PDSO28 x8 SRAM 32K X 8 STANDARD SRAM, 100 ns, PDSO28 32K x8 bit 3.0V Low Power CMOS slow SRAM
|
Hynix Semiconductor, Inc. Hynix Semiconductor Inc.
|
M5M5V416CWG-55HI M5M5V416CWG-70HI |
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM Memory>Low Power SRAM
|
http:// RENESAS[Renesas Electronics Corporation]
|